Structural, electronic, and thermal properties of hydrogenated silicon carbide with thermal heat transfer application in nanoscale metal oxide semiconductor field-effect transistor

Author:

TAIBI Ibrahim,TOUMI Khalid

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Quasi-ballistic thermal conduction in 6H-SiC;Cheng;Mater. Today Phys.,2021

2. Thermal behavior Spice study of 6H-SiCNMOS transistors;Chalabi;Microelectron. J.,2009

3. The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen;Daghbouj;J. Acta Materialia,2020

4. Density-functional theory study on electronic Structure and optical property of 6H-SiC;Zhang;J. Mater. Res. Innov.,2015

5. Investigation of dual-phase-lag heat conduction model in a nanoscale metal-oxide-semiconductor field-effect transistor;Ghazanfarian;Int. J. Heat Mass Tansfer,2012

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