The effect of CESL and dummy poly gate for n-type MOSFETs with short Si 0.75 Ge 0.25 channel-Reference-Cited by-同舟云学术

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The effect of CESL and dummy poly gate for n-type MOSFETs with short Si 0.75 Ge 0.25 channel

Published:2017-06 Issue: Volume:140 Page:66-70
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lee Chang-Chun,Hsu Hung-Wen,Liao Ming-Han

Funder

National Center for High-Performance Computing

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. Mobility analysis of surface roughness scattering in FinFET devices

2. Moore's law: the future of Si microelectronics

3. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

4. Comparison of Threshold-Voltage Shifts for Uniaxial and Biaxial Tensile-Stressed n-MOSFETs

5. A Logic Nanotechnology Featuring Strained-Silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Stress Effect of Thin Coatings and Silicon–Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate;Journal of Nanoscience and Nanotechnology;2020-02-01

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