Metal-induced crystallization of amorphous Si1−xGex by rapid thermal annealing-Reference-Cited by-同舟云学术

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Metal-induced crystallization of amorphous Si1−xGex by rapid thermal annealing

Published:2004-12 Issue: Volume:469-470 Page:356-360
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yu C.H.,Yeh P.H.,Cheng S.L.,Chen L.J.,Cheng L.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

2. Influence of melt depth in laser crystallized poly-Si thin film transistors

3. Selective area crystallization of amorphous silicon films by low‐temperature rapid thermal annealing

4. Nickel induced crystallization of amorphous silicon thin films

5. Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal induced crystallization of polycrystalline silicon germanium: The morphological study between nickel and copper;CHEMISTRY BEYOND BORDERS: INTERNATIONAL CONFERENCE ON PHYSICAL CHEMISTRY: The 1st Annual Meeting of the Physical Chemistry Division of the Indonesian Chemical Society;2023

2. Formation of nanocrystalline SiGe in Polycrystalline-Ge/Si thin film without any metal induced crystallization;AIP Conference Proceedings;2017

3. Monolithically Integrated Ge-on-Si Active Photonics;Photonics;2014-07-02

4. Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics;Optical Materials Express;2013-08-15

5. Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere;Thin Solid Films;2008-11

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