Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120898
Reference10 articles.
1. Deposition and Crystallization of a‐Si Low Pressure Chemically Vapor Deposited Films Obtained by Low‐Temperature Pyrolysis of Disilane
2. High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films
3. Metal contact induced crystallization in films of amorphous silicon and germanium
4. ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON
5. Al induced crystallization ofa‐Si
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