Selective area crystallization of amorphous silicon films by low‐temperature rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101814
Reference6 articles.
1. Secondary grain growth in thin films of semiconductors: Theoretical aspects
2. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
3. Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon
4. Grain Growth Studies in Polysilicon by AR40 Ion Implantation and Thermal Annealing
5. Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation
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