Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341065
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1. Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
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4. Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films
5. Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2Substrates
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