Formation of nanocrystalline SiGe in Polycrystalline-Ge/Si thin film without any metal induced crystallization
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http://aip.scitation.org/doi/pdf/10.1063/1.4980475
Reference6 articles.
1. Growth of poly-crystalline silicon–germanium on silicon by aluminum-induced crystallization
2. Metastable Ge nanocrystalline in SiGe matrix for photodiode
3. Metal-induced crystallization of amorphous Si1−xGex by rapid thermal annealing
4. Microcrystalline silicon–germanium solar cells with spectral sensitivities extending into 1300nm
5. Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ formation of Ge-rich SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap;Materials Science in Semiconductor Processing;2018-06
2. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system;AIP Conference Proceedings;2018
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