Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths-Reference-Cited by-同舟云学术

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Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Published:2013-10 Issue: Volume:544 Page:120-124
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hsu H.W.,Lin K.C.,Lee C.C.,Twu M.J.,Huang H.S.,Chen S.Y.,Peng M.R.,Teng H.H.,Liu C.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. A 183 GHz<tex>$f _tau$</tex>and 165 GHz<tex>$f _max$</tex>Regrown-Emitter DHBT With Abrupt InP Emitter

2. Uniaxial-process-induced strained-Si: extending the CMOS roadmap

3. The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Interaction of La2O3 capping layers with HfO2 gate dielectrics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive effects of strained Ge 1−x Sn x and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel;Materials Science in Semiconductor Processing;2017-11

2. The effect of CESL and dummy poly gate for n-type MOSFETs with short Si 0.75 Ge 0.25 channel;Vacuum;2017-06

3. Optimization of time on CF4/O2 etchant for inductive couple plasma reactive ion etching of TiO2 thin film;AIP Conference Proceedings;2016

4. Mechanical property effects of Si1−xGex channel and stressed contact etching stop layer on nano-scaled n-type metal–oxide–semiconductor field effect transistors;Thin Solid Films;2014-04

5. Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width;Thin Solid Films;2014-04

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