Interaction of La2O3 capping layers with HfO2 gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3268456
Reference20 articles.
1. Contributions to the effective work function of platinum on hafnium dioxide
2. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
3. Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
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