Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width-Reference-Cited by-同舟云学术

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Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Published:2014-04 Issue: Volume:557 Page:311-315
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Chang-Chun,Liu Chuan-Hsi,Hsu Hung-Wen,Hung Min-Hui

Funder

National Center for High-Performance Computing

National Science Council of Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A Logic Nanotechnology Featuring Strained-Silicon

2. Impact of Strain Engineering on Nanoscale Strained InGaAs MOSFET Devices

3. Strained Channel Transistor Using Strain Field Induced By Source and Drain Stressors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Stress Effect of Thin Coatings and Silicon–Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate;Journal of Nanoscience and Nanotechnology;2020-02-01

2. Effect of strained Ge-based NMOSFETs with Ge 0.93 Si 0.07 stressors on device layout;Solid-State Electronics;2017-12

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