High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition-Reference-Cited by-同舟云学术

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High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition

Published:2012-02 Issue:8 Volume:520 Page:3175-3178
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

He Hong,Brabant Paul,Chung Keith,Shinriki Manabu,Adam Thomas,Reznicek Alexander,Sadana Devendra,Hasaka Satoshi,Francis Terry

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. 45nm CMOS technology with low temperature selective epitaxy of SiGe

2. Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane

3. Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD;Materials;2021-07-03

2. Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon;Inorganic Chemistry;2019-02-20

3. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study;AIP Advances;2016-09

4. Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains;ECS Transactions;2014-08-12

5. Very Low Temperature (Cyclic) Deposition / Etch of In Situ Boron-Doped SiGe Raised Sources and Drains;ECS Journal of Solid State Science and Technology;2014

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