Very Low Temperature (Cyclic) Deposition / Etch of In Situ Boron-Doped SiGe Raised Sources and Drains-Reference-Cited by-同舟云学术

Very Low Temperature (Cyclic) Deposition / Etch of In Situ Boron-Doped SiGe Raised Sources and Drains

Published:2014 Issue:11 Volume:3 Page:P382-P390
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Hartmann J. M.,Benevent V.,André A.,Sirisopanaporn C.,Veillerot M.,Samson M. P.,Barraud S.,Essa Z.,Sermage B.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference32 articles.

1. High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: $V_{\rm th}$ Tuning, Variability, Access Resistance, and Mobility Issues

2. Morvan S. Le Royer C. Andrieu F. Perreau P. Morand Y. Cooper D. Cassé M. Garros X. Hartmann J. M. Tosti L. Brévard L. Ponthenier F. Rivoire M. Euvrard C. Seignard A. Besson P. Caubet P. Leroux C. Gassilloud R. Saidi B. Allain F. Tabone C. Poiroux T. Faynot O. , 2013 IEEE International Electron Devices Meeting (IEDM), p. 350.

3. Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET

4. Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length

5. Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors

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