Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane

Abstract

Neopentasilane (Si5H12) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si1-yCy alloys at temperatures from 550 to 700 oC. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.