Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
2. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
3. Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
4. GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
5. GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃;Journal of Crystal Growth;2024-04
2. Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry;Materials Science in Semiconductor Processing;2024-01
3. Theoretical investigation of the structural, electronic, optical, and elastic properties of the zinc blende SiGe1 − xSnx ternary alloy;Optical and Quantum Electronics;2023-07-05
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