Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. Novel dielectrics for gate oxides and surface passivation on GaN
3. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
4. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
5. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
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