Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
Author:
Funder
Kahramanmaraş Sütçü İmam University
Publisher
Elsevier BV
Subject
Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry
Reference71 articles.
1. Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode
2. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode
3. Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
4. Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
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