Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO 2 Thin Films Deposited by Reactive Magnetron Co‐Sputtering-Reference-Cited by-同舟云学术

Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO 2 Thin Films Deposited by Reactive Magnetron Co‐Sputtering

Published:2021-07-18 Issue:10 Volume:7 Page:2100488
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Weiqi¹^ORCID,Zhou Dayu¹^ORCID,Sun Nana¹,Wang Jingjing¹,Li Shuaidong¹^ORCID

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education) School of Materials Science and Engineering Dalian University of Technology Dalian 116024 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100488

Reference55 articles.

1. Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

2. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

3. The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Substrate Negative Bias on the Microstructural, Optical, Mechanical, and Laser Damage Resistance Properties of HfO2 Thin Films Grown by DC Reactive Magnetron Sputtering;Micromachines;2023-09-21

2. Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO2 Thin Films;Materials;2023-08-10

3. Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications;Journal of Physics D: Applied Physics;2023-04-28

4. Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition;Nanomaterials;2022-12-29

5. Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application;ACS Applied Electronic Materials;2022-02-21