Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829064
Reference24 articles.
1. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
2. Ferroelectricity in Simple Binary ZrO2 and HfO2
3. High dielectric constant oxides
4. Development of hafnium based high-k materials—A review
5. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$
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