Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering-Reference-Cited by-同舟云学术

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Published:2019-04-29 Issue: Volume: Page:1900042
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Mittmann Terence¹^ORCID,Materano Monica¹,Lomenzo Patrick D.¹,Park Min Hyuk¹²,Stolichnov Igor³,Cavalieri Matteo³,Zhou Chuanzhen⁴,Chung Ching‐Chang⁴,Jones Jacob L.⁴,Szyjka Thomas⁵,Müller Martina⁵⁶,Kersch Alfred⁷,Mikolajick Thomas¹⁸,Schroeder Uwe¹

Affiliation:

1. NaMLab gGmbH Noethnitzer Str. 64 01187 Dresden Germany

2. School of Materials Science and EngineeringPusan National University 2 Busandaehak‐ro 63 beon‐gil Geumjeong‐gu, Busan 46241 Republic of Korea

3. Nanoelectronic Devices LaboratoryEcole Polytechnique Fédérale de Lausanne (EPFL) Lausanne 1015 Switzerland

4. Department of Materials Science and EngineeringNorth Carolina State University Raleigh USA

5. Forschungszentrum Jülich GmbHPeter Grünberg Institut (PGI‐6) 52425 Jülich Germany

6. Faculty of PhysicsTU Dortmund 44221 Dortmund Germany

7. Department of Applied Sciences and MechatronicsMunich University of Applied Sciences 80335 Munich Germany

8. Chair of Nanoelectronic MaterialsTU Dresden 01062 Dresden Germany

Funder

Horizon 2020

Alexander von Humboldt-Stiftung

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201900042

Reference45 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

3. Ferroelectricity in Gd-Doped HfO2Thin Films

4. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

5. T. Schenk S. Mueller U. Schroeder R. Materlik A. Kersch M. Popovici C. Adelmann S. Elshocht T. Mikolajick 2013 Proc. of the European Solid‐State Device Research Conf. (ESSDERC) 2013 IEEE Bucharest 260 263

Cited by 133 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of oxygen partial pressure on phase, local structure and photoluminescence properties of Hf(1-)Y O2 thin films prepared by pulsed laser deposition;Vacuum;2024-03

2. Study of resistive switching behavior in HfO₂ nanocrystals synthesized via a low temperature hydrothermal method;Nanotechnology;2024-01-04

3. Recent progress on defect-engineering in ferroelectric HfO₂: The next step forward via multiscale structural optimization;Materials Horizons;2024

4. Ultralow operating voltage for energy conversion performance in Hf1–Zr O2 thin films;Journal of Materiomics;2024-01

5. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide;Nano Convergence;2023-12-01