Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film-Reference-Cited by-同舟云学术

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Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film

Published:2006-06 Issue:1-2 Volume:508 Page:57-60
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Itakura Masaru,Masumori Syunji,Ohta Tomohisa,Tomokiyo Yoshitsugu,Kuwano Noriyuki,Kanno Hiroshi,Sadoh Taizoh,Miyao Masanobu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation

2. Metal-contact-induced crystallization of semiconductors

3. Al induced crystallization ofa‐Si

4. Al-Induced Crystallization of an Amorphous Si Thin Film in a Polycrystalline Al/Native SiO2/Amorphous Si Structure

5. Fractal formation in a‐Si:H/Ag/a‐Si:H films after annealing

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−−Ge Sn layers on SiO2;Solid-State Electronics;2015-08

2. Low-pass secondary electron detector for outlens scanning electron microscopy;Japanese Journal of Applied Physics;2015-07-02

3. Mobility Behavior of Polycrystalline Si_1-x-yGe_xSn_y Grown on Insulators;Transactions of the Materials Research Society of Japan;2015

4. Variations in contrast of scanning electron microscope images for microstructure analysis of Si-based semiconductor materials;Journal of Electron Microscopy;2010-06-16

5. Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy;Journal of Electron Microscopy;2008-11-22

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