Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−−Ge Sn layers on SiO2-Reference-Cited by-同舟云学术

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Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−−Ge Sn layers on SiO2

Published:2015-08 Issue: Volume:110 Page:54-58
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yamaha Takashi,Kurosawa Masashi,Ohmura Takuma,Takeuchi Wakana,Taoka Noriyuki,Nakatsuka Osamu,Zaima Shigeaki

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. International electron devices meeting;Park;Tech Dig,2008

2. Solid-phase crystallization of Si1−xGex alloy layers

3. Solid phase crystallization of amorphous Si1−xGexfilms deposited on SiO2by molecular beam epitaxy

4. Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass

5. Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge_1−x−ySi_xSn_y epitaxial layers grown on GaAs(001);Japanese Journal of Applied Physics;2022-07-15

2. SiSn mediated formation of polycrystalline SiGeSn;Japanese Journal of Applied Physics;2022-02-08

3. Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices;ECS Journal of Solid State Science and Technology;2020-08-19

4. PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation;ECS Journal of Solid State Science and Technology;2020-04-01

5. Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate;Materials Science in Semiconductor Processing;2017-11

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