PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation
Author:
Funder
National Aeronautics and Space Administration
U.S. Department of Energy
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab80af/pdf
Reference38 articles.
1. Si–Ge–Sn alloys: From growth to applications
2. Direct Bandgap Group IV Epitaxy on Si for Laser Applications
3. Laser assisted formation of binary and ternary Ge/Si/Sn alloys
4. Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows
5. Impact of thickness on the structural properties of high tin content GeSn layers
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