Laser assisted formation of binary and ternary Ge/Si/Sn alloys-Reference-Cited by-同舟云学术

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Laser assisted formation of binary and ternary Ge/Si/Sn alloys

Published:2012-02 Issue:8 Volume:520 Page:3262-3265
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Stefanov S.,Conde J.C.,Benedetti A.,Serra C.,Werner J.,Oehme M.,Schulze J.,Chiussi S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Electronic properties of metastableGexSn1−xalloys

2. Band structure and instability of Ge1−xSnx alloys

3. Advances in SiGeSn technology

4. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

5. Ge–Sn semiconductors for band-gap and lattice engineering

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1. Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization;Materials Science in Semiconductor Processing;2023-12

2. Effect of Laser Pulse Width and Intensity Distribution on the Crystallographic Characteristics of GeSn Film;Coatings;2023-02-16

3. Polycrystalline GeSn thin films fabricated by simultaneous laser sintering and recrystallization;Journal of Materials Science: Materials in Electronics;2023-01-25

4. Laser sintering of polycrystalline Ge-Sn films;2021 IEEE 17th International Conference on Group IV Photonics (GFP);2021-12

5. PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation;ECS Journal of Solid State Science and Technology;2020-04-01

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