Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators-Reference-Cited by-同舟云学术

Mobility Behavior of Polycrystalline Si_1-x-yGe_xSn_y Grown on Insulators

Published:2015 Issue:4 Volume:40 Page:351-354
ISSN:1382-3469
Container-title:Transactions of the Materials Research Society of Japan
language:en
Short-container-title:Trans. Mat. Res. Soc. Japan

Author:

Ohmura Takuma¹,Yamaha Takashi¹,Kurosawa Masashi¹²,Takeuchi Wakana¹,Sakashita Mitsuo¹,Taoka Noriyuki¹³,Nakatsuka Osamu¹,Zaima Shigeaki¹⁴

Affiliation:

1. Graduate School of Engineering, Nagoya University

2. Research Fellow of the Japan Society for the Promotion of Science

3. Present address: Innovations for High Performance Microelectronics (IHP)

4. EcoTopia Science Institute, Nagoya University

Publisher

The Materials Research Society of Japan

Link

https://www.jstage.jst.go.jp/article/tmrsj/40/4/40_351/_pdf

Reference21 articles.

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