Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates-Reference-Cited by-同舟云学术

Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

Published:2012-12 Issue: Volume:524 Page:113-120
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hsiao Ching-Lien,Palisaitis Justinas,Junaid Muhammad,Persson Per O.Å.,Jensen Jens,Zhao Qing-Xiang,Hultman Lars,Chen Li-Chyong,Chen Kuei-Hsien,Birch Jens

Funder

Swedish Strategic Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Unusual properties of the fundamental band gap of InN

3. Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

5. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

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