Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2804568
Reference29 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
4. Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer
5. Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
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