Quantum chemical study on gas-phase oligomerization in AlGaN MOCVD growth-Reference-Cited by-同舟云学术

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Quantum chemical study on gas-phase oligomerization in AlGaN MOCVD growth

Published:2019-10 Issue: Volume:1166 Page:112573
ISSN:2210-271X
Container-title:Computational and Theoretical Chemistry
language:en
Short-container-title:Computational and Theoretical Chemistry

Author:

Tang Liu,Zuo Ran,Zhang Hong,Yuan Yinmei

Funder

National Natural Science Foundation of China

Research Innovation Plan for Postgraduates in Jiangsu Universities

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Biochemistry

Reference43 articles.

1. GaN growth by metallorganic vapor phase epitaxy;Safvi;J Electrochem. Soc.,1997

2. Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy;Creighton;Appl. Phys. Lett.,2002

3. Nature of the parasitic chemistry during AlGaInN OMVPE;Creighton;J. Cryst. Growth,2004

4. Fast AlGaN growth in a whole composition range in planetary reactor;Lundin;J. Cryst. Growth,2013

5. The influence of TMA and SiH4 on the incorporation rate of Ga in AlxGa1−xN crystals grown from TMG and NH3;Sayyah;J. Cryst. Growth,1986

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride;Journal of Vacuum Science & Technology A;2023-10-31

2. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22

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