Fast AlGaN growth in a whole composition range in planetary reactor-Reference-Cited by-同舟云学术

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Fast AlGaN growth in a whole composition range in planetary reactor

Published:2013-05 Issue: Volume:370 Page:7-11
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lundin W.V.,Nikolaev A.E.,Rozhavskaya M.M.,Zavarin E.E.,Sakharov A.V.,Troshkov S.I.,Yagovkina M.A.,Tsatsulnikov A.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

2. Growth of AlN single crystalline boules

3. M.A. Mastro, D.V. Tsvetkov, A.I. Pechnikov, V.A. Soukhoveev, G.H. Gainer, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K.H. Baik, S.J. Pearton, MRS Proceedings 764 (2003) C2.2, doi:10.1557/PROC-764-C2.2

4. High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

5. Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates

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2. Core–shell GaN/AlGaN nanowires grown by selective area epitaxy;Nanoscale Horizons;2023

3. Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire;Applied Surface Science;2022-07

4. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

5. Theoretical investigation on gas-phase reaction mechanism of Cp2Mg in p-type doping process of Group III nitrides;Computational and Theoretical Chemistry;2020-05

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