Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs-Reference-Cited by-同舟云学术

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Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

Published:2018-01 Issue: Volume:116 Page:496-506
ISSN:0017-9310
Container-title:International Journal of Heat and Mass Transfer
language:en
Short-container-title:International Journal of Heat and Mass Transfer

Author:

Hao Qing,Zhao Hongbo^ORCID,Xiao Yue,Kronenfeld Michael Brandon

Funder

Defense Advanced Research Projects Agency

U.S. National Science Foundation (NSF) CAREER Award

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference76 articles.

1. Recent advances in GaN transistors for future emerging applications;Yanagihara;Phys. Status Solidi (a),2009

2. SiC and GaN bipolar power devices;Chow;Solid-State Electron.,2000

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,1999

4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,2000

5. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior;Saito;IEEE Trans. Electron Devices,2003

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4. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09

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