Author:
Kim Sangtae,An Hyungmin,Oh Sangmin,Jung Jisu,Kim Byungjo,Nam Sang Ki,Han Seungwu
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference61 articles.
1. H. O. Pierson, Handbook of Refractory Carbides and Nitrides: Properites, Characteristics, Processing and Applications, Noyes, Westwood, NJ, 1996.
2. Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes;Echtermeyer;Solid-State Electron.,2007
3. FDSOI devices with thin BOX and ground plane integration for 32nm node and below;Fenouillet-Beranger;Solid-State Electron.,2009
4. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates;Brennan;J. Appl. Phys.,2015
5. Correlation between microstructure and barrier properties of TiN thin films used Cu interconnects;Moriyama;Thin Solid Films.,2002
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献