Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
Author:
Affiliation:
1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420, USA
Funder
U.S. Air Force (United States Air Force)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927517
Reference37 articles.
1. K. Tai et al., in Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006), 19–21 September 2006 ( IEEE, Piscataway, NJ, USA, 2006), p. 121.
2. Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices
3. FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics
4. Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
5. Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia
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