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Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

  • Published:2007-04 Issue:4 Volume:51 Page:617-621
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Echtermeyer T.,Gottlob H.D.B.,Wahlbrink T.,Mollenhauer T.,Schmidt M.,Efavi J.K.,Lemme M.C.,Kurz H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. International technology roadmap for Semiconductors; 2005 Edition. .

2. High-k gate dielectrics: current status and material properties considerations;Wilk;J Appl Phys,2001

3. 0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSI NiSi metal electrodes;Gottlob;IEEE Electr Dev Lett,2006

4. Molecular beam epitaxy of rare-earth oxides;Osten,2007

5. Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric;Bae;Microelectron Eng,2006
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