TCAD analysis of SiGe channel FinFET devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8068290/8085242/08085338.pdf?arnumber=8085338
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects;Micromachines;2023-05-22
2. A Novel NW-TFET Based Low Power, High Speed and Variations Resistant Comparator with Improved Linearity;2022 1st International Conference on the Paradigm Shifts in Communication, Embedded Systems, Machine Learning and Signal Processing (PCEMS);2022-05-06
3. FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node;Silicon;2022-03-19
4. Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion;Semiconductor Science and Technology;2021-12-10
5. Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors;Journal of Physics D: Applied Physics;2021-09-02
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