A Novel NW-TFET Based Low Power, High Speed and Variations Resistant Comparator with Improved Linearity-Reference-Cited by-同舟云学术

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A Novel NW-TFET Based Low Power, High Speed and Variations Resistant Comparator with Improved Linearity

Published:2022-05-06 Issue: Volume: Page:
ISSN:
Container-title:2022 1st International Conference on the Paradigm Shifts in Communication, Embedded Systems, Machine Learning and Signal Processing (PCEMS)
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Author:

Rajan Chithraja¹,Patel Jyoti²,Satpute Vishal R.¹,Samajdar Dip Prakash³

Affiliation:

1. Visvesvaraya National Institute of Technology,Electronics and Communication Engineering,Nagpur,India

2. Indian Institute Of Technology,Electronics and Communication Engineering,Roorkee,India

3. PDPM-Indian Institute of Information Technology,Electronics and Communication Engineering,Jabalpur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9807686/9807845/09807858.pdf?arnumber=9807858

Reference29 articles.

1. Implementation of digital-to-analog converter through CP-based GaAs/GaSb nanowire GAA-TFET

2. Design Principles for a Novel Lightweight Configurable PUF Using a Reconfigurable FET

3. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations

4. TCAD analysis of SiGe channel FinFET devices

5. III-V Ternary and Quaternary Compounds

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Gate All Around Architecture in Polarity Based TFET with RF/Analog Analysis;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05

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