Author:
Li Chuan-Gang,Ju Tao,Zhang Li-Guo,Li Yang,Zhang Xuan,Qin Juan,Zhang Bao-Shun,Zhang Ze-Hong, ,
Abstract
“Bipolar degradation” phenomenon has severely impeded the development of 4H-SiC bipolar devices. Their defect mechanism is the expansion of Shockley-type stacking faults from basal plane dislocations under the condition of electron-hole recombination. To suppress the “bipolar degradation” phenomenon, not only do the basal plane dislocations in the 4H-SiC drift layer need eliminating, but also a recombination-enhancing buffer layer is required to prevent the minority carriers of holes from reaching the epilayer/substrate interface where high-density basal plane dislocation segments exist. In this paper, Ti and N co-doped 4H-SiC buffer layers are grown to further shorten the minority carrier lifetime. Firstly, the dependence of Ti doping concentration on TiCl<sub>4</sub> flow rate in 4H-SiC epilayers is determined by using single-dilution gas line and double-dilution gas line. Then the p<sup>+</sup> layer and p<sup>++</sup> layer in PiN diode are obtained by aluminum ion implantation at room temperature and 500 ℃ followed by high temperature activation annealing. Finally, 4H-SiC PiN diodes with a Ti, N co-doped buffer layer are fabricated and tested with a forward current density of 100 A/cm<sup>2</sup> for 10 min. Comparing with the PiN diodes without a buffer layer and with a buffer layer only doped with high concentration of nitrogen, the forward voltage drop stability of those diodes with a 2 μm-thick Ti, N co-doped buffer layer (Ti: 3.70 × 10<sup>15</sup> cm<sup>–3</sup> and N: 1.01 × 10<sup>19</sup> cm<sup>–3</sup>) is greatly improved.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07