Electric dipole effect in PdCoO 2 /β-Ga 2 O 3 Schottky diodes for high-temperature operation
Author:
Affiliation:
1. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
2. Center for Spintronics Research Network (CSRN), Tohoku University, Sendai 980-8577, Japan.
Abstract
Funder
Japan Society for the Promotion of Science
JST CREST
Mayekawa Houonkai Foundation
Tanaka Foundation
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference38 articles.
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2. High-temperature electronics—A role for wide bandgap semiconductors?;Neudeck P. G.;Proc. IEEE,2002
3. S. M. Sze K. K. Ng Physics of Semiconductor Devices (Wiley 2006).
4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
5. Recent progress in Ga2O3 power devices;Higashiwaki M.;Semicond. Sci. Technol.,2016
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