Affiliation:
1. Department of Physics Zhejiang Sci‐Tech University Hangzhou 310000 China
2. Center for Optoelectronics Materials and Devices and Key Laboratory of Optical Field Manipulation of Zhejiang Province Hangzhou 310018 China
3. Innovation Center for Gallium Oxide Semiconductor (IC‐GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China
4. Changshan Research Institute Zhejiang Sci‐Tech University Changshan 324200 China
5. Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin 541004 China
6. Tiantong Holding Co., LTD Haining 314400 China
Abstract
AbstractGallium oxide (β‐Ga2O3) is a prominent representative of the new generation of wide‐bandgap semiconductors, boasting a bandgap of ≈4.9 eV. However, the growth process of β‐Ga2O3 materials introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance. In this study, an innovative approach is successfully developed by introducing high p‐orbital energy nitrogen (N). This leads to the formation of a hybridized state with O 2p orbitals in β‐Ga2O3, resulting in the creation of GaON and suppressing the electrical activity of Vo. Through meticulous experimentation and advanced computational methods, a comprehensive and insightful explanation of the regulation and mechanism underlying this passivation process is offered. Moreover, pn‐junction solar‐blind photodetectors are engineered using hybridized GaON thin films with p‐type CuPc. These photodetectors demonstrate exceptional characteristics, including ultra‐low dark current (10−14 A), high photo‐to‐dark current ratio (106), and rapid decay speed (0.008 s) even at zero bias. Based on these advancements, a solar‐blind ultraviolet communication system is designed, featuring straightforward and reliable encoding, easy implementation, and robust anti‐interference capabilities.
Funder
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials