Enhanced Photoresponsivity UV-C Photodetectors Using a p–n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> Microflake/MnO Quantum Dots-Reference-Cited by-同舟云学术

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Enhanced Photoresponsivity UV-C Photodetectors Using a p–n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga₂O₃ Microflake/MnO Quantum Dots

Published:2023-02-21 Issue:9 Volume:15 Page:12127-12136
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Alwadai Norah¹²,Alharbi Zohoor¹,Alreshidi Fatimah¹,Mitra Somak¹,Xin Bin¹,Alamoudi Hadeel¹,Upadhyaya Kishor¹,Hedhili Mohamed N.³,Roqan Iman S.¹^ORCID

Affiliation:

1. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia

2. Department of Physics, College of Sciences, Princess Nourah Bint Abdulrahman University (PNU), Riyadh11671, Saudi Arabia

3. Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c18900

Reference65 articles.

1. High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions

2. Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices

3. High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

4. Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

5. Correction: The origin of room temperature ferromagnetism mediated by Co–VZn complexes in the ZnO grain boundary

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