Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Published:2013-11-01 Issue:11 Volume:6 Page:112601
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Dominguez Lara,Reyes Daniel F.,Bastiman Faebian,Sales David L.,Richards R. D.,Mendes D.,David John P. R.,Gonzalez David

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=11/a=112601/pdf

Reference28 articles.

1. Characteristics of Semiconductor Alloy GaAs1-xBix

2. Raman studies on GaAs[sub 1−x]Bi[sub x] and InAs[sub 1−x]Bi[sub x]

3. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semi-empirical growth model of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2024-02

2. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024

3. The Effects of Growth Interruptions in the Gaasbi Capping Growth on Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles;2024

4. Intervalley energy separation in the conduction band of InAs_1−xBi _x determined by terahertz emission spectroscopy;Japanese Journal of Applied Physics;2023-04-01

5. Semi-Empirical Growth Model of Insbbi Grown by Molecular Beam Epitaxy;2023

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