The Effects of Growth Interruptions in the Gaasbi Capping Growth on Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles-Reference-Cited by-同舟云学术

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The Effects of Growth Interruptions in the Gaasbi Capping Growth on Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles

Published:2024 Issue: Volume: Page:
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Author:

Flores Sara,de los Reyes Daniel Fernandez,Braza Verónica,Bailey Nick James,Carr Matthew,Richards Robert,Gonzalez David

Publisher

Elsevier BV

Reference53 articles.

1. High-performance InAs quantum-dot lasers near 1.3 ?m;Y Qiu;Appl Phys Lett,2001

2. High performance quantum dot lasers on GaAs substrates operating in 1.5 ?m range;N N Ledentsov;Electron Lett,2003

3. Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview;Y Arakawa;Appl Phys Rev,2020

4. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells;A D Utrilla;Solar Energy Materials and Solar Cells,2017

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