Raman studies on GaAs[sub 1−x]Bi[sub x] and InAs[sub 1−x]Bi[sub x]
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference26 articles.
1. K. Oe and H. Asai, Symp. Records of Electronic Material Symp., Izu-Nagaoka (1995), p. 191.
2. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
3. Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
4. Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi
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