Semi-Empirical Growth Model of Insbbi Grown by Molecular Beam Epitaxy

Author:

Loke Wan Khai,Tan Kian Hua,Wicaksono Satrio,Fatt Yoon Soon

Publisher

Elsevier BV

Reference18 articles.

1. Valence Band Structure of InAsBi and InSbBi Alloy Semiconductors Calculated Using Valence Band Anticrossing Model;D P Samajdar;The Scientific World Journal,2014

2. Photoluminescence from InSb1-xBix alloys at extended wavelengths on InSb;R C White;Applied Physics Letters,2022

3. Growth of InSb1-xBix single crystals by Czochralski method;B Joukoff;Journal of Crystal Growth,1972

4. Structural and electronic properties of III-V bismuth compounds;M Ferhat;Physical Review B,2006

5. Growth of InBixSb (1-x) films on GaAs (0 0 1) substrates using liquid phase epitaxy and their characterization;V Dixit;Journal of crystal growth,2002

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