Growth of InBixSb(1−x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates
2. 8–13 μm InAsSb heterojunction photodiode operating at near room temperature
3. Growth of InSb1-xBix single crystals by Czochralski method
4. Growth and characterization of InSbBi for long wavelength infrared photodetectors
5. Indium antimonide‐bismuth compositions grown by molecular beam epitaxy
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1. Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate;Semiconductor Science and Technology;2024-05-02
2. Semi-empirical growth model of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2024-02
3. Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2023-08
4. Liquid‐Phase Epitaxy;digital Encyclopedia of Applied Physics;2023-01-18
5. Semi-Empirical Growth Model of Insbbi Grown by Molecular Beam Epitaxy;2023
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