Redshift ofA1(longitudinal optical) mode for GaN crystals under strong electric field
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=1/a=011002/pdf
Reference37 articles.
1. Bulk GaN crystals grown by HVPE
2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
3. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition
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