Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition-Reference-Cited by-同舟云学术

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Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition

Published:2016-06-28 Issue:7 Volume:9 Page:071003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Anderson Travis J.,Wheeler Virginia D.,Shahin David I.,Tadjer Marko J.,Koehler Andrew D.,Hobart Karl D.,Christou Aris,Kub Francis J.,Eddy Charles R.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=7/a=071003/pdf

Reference25 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

3. Recent advances on dielectrics technology for SiC and GaN power devices

4. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

5. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

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1. Accurate band alignment of sputtered Sc₂O₃ on GaN for high electron mobility transistor applications;Semiconductor Science and Technology;2024-06-12

2. 545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching;IEEE Electron Device Letters;2024-06

3. High-breakdown-voltage GaN-based vertical FinFET design;Journal of Power Electronics;2023-12-21

4. Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage;Applied Physics Letters;2023-11-06

5. Small V _th Shift and Low Dynamic R _on in GaN MOSHEMT With ZrO₂ Gate Dielectric;IEEE Transactions on Electron Devices;2023-11

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