Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN-Reference-Cited by-同舟云学术

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Published:2022-11-23 Issue:48 Volume:126 Page:20686-20693
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Xiaorui¹²,Zhao Degang³,Ning Jiqiang⁴,Yu Dapeng²,Xu Shijie¹⁴^ORCID

Affiliation:

1. Department of Physics and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China

2. Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China

3. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Haidian District, Beijing 100083, China

4. Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Yangpu District, Shanghai 200438, China

Funder

Shenzhen Science and Technology Innovation Commission

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c06260

Reference44 articles.

1. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

2. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode