Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes-Reference-Cited by-同舟云学术

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Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Published:2015-03-04 Issue:4S Volume:54 Page:04DF07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hu Jie,Stoffels Steve,Lenci Silvia,Wu Tian-Li,Ronchi Nicolò,You Shuzhen,Bakeroot Benoit,Groeseneken Guido,Decoutere Stefaan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DF07/pdf

Reference36 articles.

1. GaN Power Transistors on Si Substrates for Switching Applications

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

4. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

5. Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure;Electronics;2024-08-29

2. Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses;Optics Letters;2021-07-21

3. Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions;IEEE Transactions on Electron Devices;2020-05

4. A New Parameter Extraction Method for Schottky Barrier Diodes;Chinese Journal of Electronics;2019-05

5. Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes;Applied Physics Letters;2016-07-18

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