Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference31 articles.
1. A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction
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3. Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate
4. Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure
5. Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
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1. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance;IEEE Transactions on Electron Devices;2023-07
2. Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film;Vacuum;2023-07
3. Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection;Journal of Alloys and Compounds;2023-05
4. High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties;Journal of Vacuum Science & Technology B;2022-12
5. Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects;Sensors and Actuators A: Physical;2022-11
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