Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate-Reference-Cited by-同舟云学术

Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

Published:2021-01-11 Issue:2 Volume:118 Page:021101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dalapati Pradip¹^ORCID,Yamamoto Kosuke¹,Egawa Takashi¹²,Miyoshi Makoto¹²^ORCID

Affiliation:

1. Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027127

Reference32 articles.

1. Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures

2. Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes

3. Degradation of AlGaN-based metal-semiconductor-metal photodetectors

4. Study of effective carrier lifetime and ideality factor of BPW 21 and BPW 34B photodiodes from above room temperature to liquid nitrogen temperature

5. Wide-bandgap semiconductor ultraviolet photodetectors

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