Degradation of AlGaN-based metal-semiconductor-metal photodetectors-Reference-Cited by-同舟云学术

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Degradation of AlGaN-based metal-semiconductor-metal photodetectors

Published:2019-05-20 Issue:SC Volume:58 Page:SCCC21
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Brendel M.,Hagedorn S.,Brunner F.,Reiner M.,Zeimer U.,Weyers M.

Funder

Bundesministerium für Wissenschaft und Forschung

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab1128/pdf

Reference41 articles.

1. Short-wavelength solar-blind detectors-status, prospects, and markets

2. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

3. Band parameters for III–V compound semiconductors and their alloys

4. Properties of Zn‐doped GaN. II. Photoconductivity

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1. MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlₓGa₁–ₓN Hetero-Epilayers;IEEE Transactions on Electron Devices;2024-07

2. A 250 nm high-performance AlGaN-based metal–semiconductor–metal deep ultraviolet detector;Micro and Nanostructures;2023-12

3. Optical power degradation mechanisms in 271 nm AlGaN-based deep ultraviolet light-emitting diodes;Optics Express;2023-06-01

4. The road ahead for ultrawide bandgap solar-blind UV photodetectors;Journal of Applied Physics;2022-04-21

5. Multifunctional Ultraviolet-C Micro-LED With Monolithically Integrated Photodetector for Optical Wireless Communication;Journal of Lightwave Technology;2022-01-15

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